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| ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES * 5.5 amps continuous current * Up to 20 amps peak current * Very low saturation voltages * Exceptional gain linearity down to 10mA * Excellent high current gain hold up SOT89 APPLICATIONS * DC - DC converters * MOSFET gate drivers * Charging circuits * Power switches * Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE 7" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1000 units ZXTP2008ZTA DEVICE MARKING 949 TOP VIEW ISSUE 1 - JUNE 2005 1 ZXTP2008Z ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range T j , T stg PD (a) SYMBOL BV CBO BV CEO BV EBO IC I CM PD LIMIT -50 -30 -7 -5.5 -20 1.5 12 2.1 16.8 -55 to 150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 83 60 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - JUNE 2005 2 ZXTP2008Z CHARACTERISTICS ISSUE 1 - JUNE 2005 3 ZXTP2008Z ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-base breakdown voltage SYMBOL BV CBO MIN. -50 -50 -30 -7.0 TYP. -70 -70 -40 -8.0 <-1 -20 -0.5 Collector cut-off current I CER R <1k Emitter cut-off current Collector-emitter saturation voltage I EBO V CE(SAT) <-1 -25 -35 -55 -55 -130 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) h FE 100 100 70 10 Transition frequency fT C OBO t ON t OFF NOTES * Measured under pulsed conditions. Pulse width MAX. UNIT V V V V nA A nA A nA mV mV mV mV mV mV mV CONDITIONS I C = -100 A I C = -1 A, RB <1k I C = -10mA * I E = -100 A V CB = -40V V CB = -40V,T amb =100C V CB = -40V V CB = -40V,T amb =100C V EB = -6V I C = -0.5A, I B = -20mA * I C = -1A, I B = -100mA * I C = -1A, I B = -20mA * I C = -2A, I B = -200mA * I C = -5.5A, I B =-500mA * I C = -5.5A, IB = -500mA * I C = -5.5A, V CE = -1V * I C = -10mA, V CE = -1V * I C = -1A, V CE = -1V * I C = -5A, V CE = -1V * I C = -20A, V CE = -1V * Collector-emitter breakdown voltage BV CER Collector-emitter breakdown voltage BV CEO Emitter-base breakdown voltage Collector cut-off current BV EBO I CBO <-1 -20 -0.5 -10 -40 -55 -80 -80 -175 -1070 -960 -970 -860 225 200 145 20 110 300 MHz I C = -100mA, V CE = -10V f = 50MHz V CB = -10V, f = 1MHz * I C = -1A, V CC = -10V, I B1 = -I B2 = -100mA Output capacitance Switching times 83 43 230 pF ns 300 s; duty cycle 2%. ISSUE 1 - JUNE 2005 4 ZXTP2008Z TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 ZXTP2008Z PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A b b1 b2 c D 1.40 0.38 1.50 0.28 4.40 Max 1.60 0.48 0.53 1.80 0.44 4.60 Min 0.550 0.015 0.060 0.011 0.173 Max 0.630 0.019 0.021 0.071 0.017 0.181 e E E1 G H Inches DIM Min 1.40 3.75 2.90 2.60 Max 1.50 4.25 2.60 3.00 2.85 Min 0.055 0.150 0.114 0.102 Max 0.059 0.167 0.102 0.118 0.112 Millimeters Inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2005 6 |
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